Semiconductor light source apparatus

A semiconductor light source apparatus, comprising:

• a phosphor layer having a top surface, a bottom edge, an inner surface, an outer surface, a cavity and a top edge located between the top surface and the outer surface, and including at least one phosphor material, the at least one phosphor material configured to convert at least one energy of blue light and ultraviolet light into light having a wavelength, the top surface including at least one of a planar surface, a convex surface and a concave surface, the bottom edge having a ring shape and being located between the outer surface and the inner surface of the phosphor layer, the cavity being defined by the inner surface of the phosphor layer, an opening surrounded by the bottom edge and a convex surface located opposite the opening, the convex surface having a top end and a central axis formed in a rotational plane with respect to the central axis and connecting to the inner surface of the phosphor layer, and therefore the inner surface of the phosphor layer forming the convex surface in the cavity, and the phosphor layer configured such that the cavity narrows from the opening toward the top end of the convex surface along the central axis of the convex surface;
• a clad layer having a first opening, a second opening and an inner surface, and having a ring shape, the inner surface of the clad layer including a reflective material and being located adjacent the outer surface of the phosphor layer, the first opening of the clad layer located adjacent the top edge of the phosphor layer, and the second opening of the clad layer located adjacent the bottom edge of the phosphor layer;
• and
• a semiconductor laser diode having an optical axis configured to emit laser light, including at least one of a blue light and an ultraviolet light, toward the convex surface when the semiconductor laser diode operates, the optical axis of the semiconductor laser diode corresponding to the central axis of the convex surface in the cavity of the phosphor layer so that the laser light enters into the phosphor layer from the convex surface, wherein the convex surface is configured to diffuse another portion of the laser light not entering into the phosphor layer from the convex surface.

A semiconductor light source apparatus, comprising:

• a phosphor layer having an outer surface, an inner surface, a bottom surface and a cavity, the phosphor layer being formed in a dome shape, and the phosphor layer including at least one phosphor material, the at least one phosphor material configured to convert at least one energy of blue light and ultraviolet light into light having a wavelength, the outer surface including a light-emitting surface, the light-emitting surface of the outer surface including at least one of a planar surface, a convex surface and a concave surface, the bottom surface formed in a ring shape and being located between the outer surface and the inner surface of the phosphor layer, the cavity being defined by the inner surface of the phosphor layer that is formed in a dome shape, an opening surrounded by the bottom surface and a convex surface located opposite the opening, the convex surface having a top end and a central axis formed in a rotational plane with respect to the central axis and connecting to the inner surface of the phosphor layer, and therefore the inner surface of the phosphor layer forming the convex surface in the cavity;
• a clad layer having a first opening, a second opening and an inner surface, and formed in a ring shape, the inner surface of the clad layer including a reflective material and being located adjacent the outer surface of the phosphor layer, the first opening of the clad layer exposing the light-emitting surface of the phosphor layer from the outer surface of the phosphor layer, and the second opening of the clad layer located adjacent the bottom surface of the phosphor layer;
• and
• a semiconductor laser diode having an optical axis and configured to emit a laser light, including at least one of a blue light and an ultraviolet light, toward the convex surface in the cavity when the semiconductor laser diode operates, the optical axis of the semiconductor laser diode corresponding to the central axis of the convex surface in the cavity of the phosphor layer so that at least a portion of the laser light enters into the phosphor layer from the convex surface, wherein the convex surface in the cavity of the phosphor layer is configured to diffuse another portion of the laser light not entering into the phosphor layer from the convex surface.