Photodetector and upconversion device with gain (EC)
AssigneesUniversity of Florida Research Foundation, Inc., Nanoholdings, LLC
InventorsFranky So, Do Young Kim, Bhabendra K. Pradhan
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Abstract
Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.
Claims24
An IR photodetector with gain, comprising a cathode, an IR sensitizing material layer, a charge multiplication layer (CML), and an anode, wherein the CML separates the IR sensitizing material layer from the cathode and has a LUMO level >0.5 eV higher than the cathode's Fermi level absent IR radiation or the CML separates the IR sensitizing material layer from the anode and has a HOMO level >0.5 eV lower than the anode's Fermi level absent IR radiation.
Dependencies are inferred from the claim text.