Parasitic capacitance extraction for FinFETs

A method comprising:

• creating pseudo contacts for Fin Field-Effect Transistors (FinFETs) of an integrated circuit;
• using the pseudo contacts to determine a poly-to-metal-contact spacing, a fin-to-fin spacing, and a metal-contact-to-second-poly spacing for each of the FinFETs;
• using the poly-to-metal-contact spacing, the fin-to-fin spacing, and the metal-contact-to-second-poly spacing as indices to index into a three-dimensional capacitance table;
• and
• retrieving a normalized capacitance value from a table cell of the three-dimensional capacitance table indexed to by the poly-to-metal-contact spacing, the fin-to-fin spacing, and the metal-contact-to-second-poly spacing, wherein the step of retrieving is performed by a computer.

A method comprising:

• generating a plurality of sample Fin Field-Effect Transistors (FinFETs), wherein poly-to-metal-contact spacings, fin-to-fin spacings, and metal-contact-to-second-poly spacings of the plurality of sample FinFETs are different from each other;
• simulating normalized poly-to-fin capacitances of the plurality of sample FinFETs, wherein the step of simulating is performed using a computer;
• simulating normalized poly-to-metal-contact capacitances of the plurality of sample FinFETs;
• constructing a first three-dimensional table, wherein table cells of the first three-dimensional table are the normalized poly-to-fin capacitances, and wherein the table cells of the first three-dimensional table are indexed by the poly-to-metal-contact spacings, the fin-to-fin spacings, and the metal-contact-to-second-poly spacings;
• and
• constructing a second three-dimensional table, wherein table cells of the second three-dimensional table are the normalized poly-to-metal-contact capacitances, and wherein the table cells of the second three-dimensional table are indexed by the poly-to-metal-contact spacings, the fin-to-fin spacings, and the metal-contact-to-second-poly spacings.