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US 8,823,449 B2Granted
Extremely high frequency dual-mode class AB power amplifier
AssigneeST-Ericsson SA
InventorsJoos Dieter, Wim Philibert, Patrick Reynaert, Dixian Zhao
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AssigneeST-Ericsson SA
InventorsJoos Dieter, Wim Philibert, Patrick Reynaert, Dixian Zhao
Estimating the term…
An Extremely High Frequency (EHF) dual-mode PA with a power combiner is designed using 40-nm bulk CMOS technology. One of the unit PAs can be switched off for the low power applications. In the design, circuit level optimization and trade-off are performed to ensure the good performance in both modes. The PA achieves a PSAT of 17.4 dBm with 29.3% PAE in high power mode and a PSAT of 12.6 dBm with 19.6% PAE in low power mode. The reliability measurements are also conducted and a lifetime of 80613 hours is estimated based on a commonly used empirical model. The excellent performance (e.g., highest reported PAE) achieved in this design further confirms the scaling of CMOS technology will continue to benefit the mm-wave transceiver design.
A dual-mode power amplifier (PA) operative to amplify Radio Frequency (RF) signals having Extremely High Frequencies (EHF), comprising:
A method of operating a dual-mode power amplifier (PA) operative to amplify Radio Frequency (RF) signals having Extremely High Frequencies (EHF), the PA comprising a plurality of separately-enabled, differential PA units arranged in parallel, wherein each PA unit comprises an input stage comprising a pair of transistors arranged in a common-gate configuration and a plurality of serially-connected output stages, each comprising a pair of transistors arranged in a common-source configuration and wherein a transformer-based coupling circuit combines the outputs of the PA units, the method comprising:
Dependencies are inferred from the claim text.