Apparatus of analyzing a sample and a method for the same

#The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced generations of ICs where each generation has smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased while geometry size (i.e., the smallest component (or line) that can be created using a fabrication process) has decreased. This scaling down process generally provides benefits by increasing production efficiency and lowering associated costs.

#Defect analysis is an important aspect of the IC industry. It is common for defects to occur in the substrate being fabricated, such as a wafer with one or more dies, as well as in masks used to fabricate the substrate. In light of the advanced scaling that has occurred, smaller defects become more critical, and more difficult to detect and analyze. Generally, tools such as a transmission electron microscope (TEM) or an energy-dispersing x-ray scanning electron microscope or energy dispersive X-ray spectroscopy (collectively referred to as EDX) are used for defect analysis. However, these tools often have difficulty with very small defects, and for handling background signals. Also, sample preparation for these tools are often very difficult to prepare, and sometime require destroying the item (e.g., wafer or mask) to be analyzed. Accordingly, what is needed is a method to analyze defects in a quicker and more accurate way.

#The present disclosure is best understood from the following detailed description when read with accompanying figures. It is emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustration purpose only. In fact, the dimension of the various features may be arbitrarily increased or reduced for clarity of discussion.

#FIG. 1 is a diagram of an analytical tool according to one or more embodiments.

#FIGS. 2A and 2B are diagrams of an apparatus for charactering a defect on a substrate for benefiting from one or more embodiments.

#The following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

#Referring now to FIG. 1, a diagram of an analytical tool 100 for analyzing a defect falling on a substrate is illustrated according to one or more embodiments. In the present embodiments, a defect is also referred to as a foreign defect or a particle. The analytical tool 100 includes an electromagnetic radiation source 102, an electromagnetic radiation beam 104, a stage 106, a signal 108, and a detector 110. It is understood that other configurations and inclusion or omission of various items in the analytical tool 100 may be possible. In the depicted embodiment, the analytical tool 100 is used to determine or characterize chemical component(s) of a defect, such as a particle from an IC device, and find the source of the defect in a semiconductor fab. A substrate may include a wafer substrate, a mask substrate, a semiconductor device, or a piece of material from a wafer substrate, a mask substrate or a semiconductor device.

#The electromagnetic radiation source 102 includes a source generating the electromagnetic radiation beam 104, such as a light beam, an electron beam, or an ion beam. The stage 106 is a place securing a substrate and providing movement in X, Y and X direction or rotation for a substrate. The stage 106 includes motors, roller guides, and tables; secures a sample; provides the accurate position and movement of a substrate in X, Y and Z directions; and allow a electromagnetic radiation beam focusing on a defect falling on a substrate. The signal 108 includes an electromagnetic radiation pulse signal generated by an interaction between a defect falling on a substrate and the electromagnetic radiation beam 104 focused on the defect. The detector 110 receives the signal 108 from a defect falling on a substrate and converts the signal 108 to a chemical characterization, such as a spectrum of a chemical function group or a chemical component profile of a defect falling on a substrate using a computer. The detector 110 includes a light detector, an electron detector, or an ion detector. The detector 110 also includes a processor to convert an electromagnetic radiation pulse signal to a voltage signal used by a computer.