Memory system and memory controller
AssigneeKabushiki Kaisha Toshiba
InventorHaruki Toda
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AssigneeKabushiki Kaisha Toshiba
InventorHaruki Toda
Estimating the term…
A memory system according to the embodiment comprises a memory device including a plurality of memory cells operative to store storage data, the storage containing input data from external to which parity information is added; and a memory controller operative to convert between the input data and the storage data, the storage data containing information data corresponding to the input data, and a relationship between the information data and the input data being nonlinearly.
A memory system that identifies a type of memory controller, comprising:
A memory system that identifies a type of memory controller, comprising:
A memory controller capable of controlling a memory device that identifies a type of memory controller and includes plural memory cells operative to store storage data, wherein
A method of operating a memory system that identifies a type of memory controller, comprising:
Dependencies are inferred from the claim text.
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In individual solid state devices: in multilevel memories
Using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits: linear codes
Computing and data processing
Coding
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About 5 years 10 months of term left · ends 24 Aug 2032 (estimated)
This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2011-048533, filed on Mar. 7, 2011, the entire contents of which are incorporated herein by reference.
The embodiment relates to a memory system and memory controller.
Variable resistance memories (ReRAM: Resistance RAM) and so forth, which can be easily formed in 3 dimensions, have received attention as mass data storable memories. Technologies for storing mass data include not only the use of specific memory cells such as ReRAM but also multi-leveling of memory cells. This technology can be found, for example, in NAND flash memories.
FIG. 1 is a block diagram of a memory system according to the embodiment.
FIG. 2 is a diagram showing an example of the correspondence between the level of 1 MLC (Multi-Level Cell) and 1 bit of a page buffer in the memory system according to the embodiment.
FIG. 3 is a diagram illustrative of an ECC using a binary code (Gray code).
A memory system according to the embodiment comprises a memory device including a plurality of memory cells operative to store storage data, the storage data containing input data from external to which parity information is added; and a memory controller operative to convert between the input data and the storage data, the storage data containing information data corresponding to the input data, and a relationship between the information data and the input data being nonlinearly.
A memory system and memory controller according to the embodiment will now be described below with reference to the drawings.
[Overview of Memory System]