Plasmonic nanostructures for organic image sensors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShu-Ju Tsai, Yeur-Luen Tu, Cheng-Ta Wu, Cheng-Yuan Tsai, Chia-Shiung Tsai, Xiaomeng Chen
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShu-Ju Tsai, Yeur-Luen Tu, Cheng-Ta Wu, Cheng-Yuan Tsai, Chia-Shiung Tsai, Xiaomeng Chen
Estimating the term…
Some embodiments of the present disclosure relate to an optical sensor. The optical sensor includes a first electrode disposed over a semiconductor substrate. A photoelectrical conversion element, which includes a p-type layer and an n-type layer, is arranged over the first electrode to convert one or more photons having wavelength falling within a predetermined wavelength range into an electrical signal. A second electrode is disposed over the photoelectrical conversion element. The second electrode is transparent in the predetermined wavelength range. A color filter element, which is made up of plasmonic nanostructures, is disposed over the second electrode.
An optical sensor, comprising:
An optical sensor, comprising:
An optical sensor, comprising:
Dependencies are inferred from the claim text.