Method of manufacturing a structure based on anisotropic etching, and silicon substrate with etching mask

A method of manufacturing a structure, comprising:

• a first step of forming, on a monocrystal silicon substrate having a (100) surface as a principal surface, a first mask pattern corresponding to a target shape having at least a first configuration with a corner and a second configuration adjoining the first configuration with an opening therebetween, and a second mask pattern extending from a portion of the first mask pattern corresponding to the first configuration and connected to a portion of the first mask pattern corresponding to the second configuration, wherein the corner of the first configuration is formed by a line extending in a [110] direction and a line extending in a [1-10] direction, and the second configuration has a side formed by a line extending in the [110] direction, wherein the second mask pattern has an extension extending in the [1-10] direction from a portion corresponding to a corner of the first configuration and a bent portion branched or bent from the extension, and wherein the second mask is connected with a side, extending in the [110] direction, of a portion of the first mask corresponding to the second configuration;
• and
• a second step of performing anisotropic etching to the monocrystal silicon substrate having the first mask pattern and the second mask pattern, to form the target shape.