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US 8,806,400 B1Granted
System and method of testing through-silicon vias of a semiconductor die
AssigneeQUALCOMM Incorporated
InventorSudipta Bhawmik
Life of this patent
Estimating the term…
Abstract
A method includes contacting a first group of through-silicon vias (TSVs) contacts with a multi-contact probe and applying a first voltage value to each of the first group of TSV contacts via the multi-contact probe, where the first group of TSV contacts corresponds to a first group of TSVs. The method also includes determining, based on a second voltage value detected at a particular TSV of the first group of TSVs, whether the particular TSV corresponds to a TSV test result.
Claims31
A method of testing through-silicon vias (TSVs) of a semiconductor die via TSV contacts external to the semiconductor die, the method comprising:
- contacting a first group of TSV contacts with a multi-contact probe and applying a first voltage value to each of the first group of TSV contacts via the multi-contact probe, wherein the first group of TSV contacts corresponds to a first group of TSVs;
- and
- determining, based on a second voltage value detected at a particular TSV of the first group of TSVs, whether the particular TSV corresponds to a TSV test result, wherein the particular TSV is coupled to a bi-directional buffer circuit.
An apparatus comprising:
- a semiconductor device including:
- one or more through-silicon via (TSV) contacts coupled to one or more TSVs, wherein each TSV is coupled to a respective bi-directional buffer circuit;
- and
- a TSV test circuit configured, after a first group of TSV contacts of the one or more TSV contacts is contacted with a multi-contact probe and a first voltage value is applied to each of the first group of TSV contacts via the multi-contact probe, the first group of TSV contacts corresponding to a first group of TSVs of the one or more TSVs, to determine, based on a second voltage value detected at a particular TSV of the first group of TSVs via the respective bi-directional buffer circuits, whether the particular TSV corresponds to a TSV open condition or a TSV short condition.
1 more element
An apparatus comprising:
- a semiconductor device including:
- means for providing a conductive path between a multi-contact probe and one or more through-silicon vias (TSVs), wherein each of the one or more TSVs is coupled to a respective bi-directional buffer circuit;
- means for selectively biasing the one or more TSVs to a programmable voltage and for reading a voltage at the one or more TSVs;
- and
- means for determining, after a first group of TSV contacts of one or more TSV contacts is contacted with the multi-contact probe and a first voltage value is applied to each of the first group of TSV contacts via the multi-contact probe, wherein the first group of TSV contacts corresponds to a first group of TSVs of the one or more TSVs, based on a second voltage value detected at a particular TSV of the first group of TSVs, whether the particular TSV corresponds to a TSV open condition or a TSV short condition.
2 more elements
A non-transitory computer readable tangible medium storing instructions executable by a computer, the instructions comprising:
- instructions that are executable by the computer to contact a first group of through-silicon via (TSV) contacts with a multi-contact probe and to apply a first voltage value to each of the first group of TSV contacts via the multi-contact probe, wherein the first group of TSV contacts corresponds to a first group of TSVs, and wherein each TSV of the first group of TSVs is coupled to a respective bi-directional buffer circuit;
- and
- instructions that are executable by the computer to determine, based on a second voltage value detected at a particular TSV of the first group of TSVs, whether the particular TSV corresponds to a TSV open condition or a TSV short condition.
A method comprising:
- a step for contacting a first group of through-silicon via (TSV) contacts with a multi-contact probe and a step for applying a first voltage value to each of the first group of TSV contacts via the multi-contact probe, wherein the first group of TSV contacts corresponds to a first group of TSVs, and wherein each TSV of the first group of TSVs is coupled to a respective bi-directional buffer circuit;
- and
- a step for determining, based on a second voltage value detected at a particular TSV of the first group of TSVs, whether the particular TSV corresponds to a TSV open condition or a TSV short condition.
A method comprising:
- receiving design information comprising physical positioning information of a packaged semiconductor device on a circuit board, the packaged semiconductor device comprising:
- one or more through-silicon via (TSV) contacts coupled to one or more TSVs, wherein each TSV is coupled to a respective bi-directional buffer circuit including an output enable cell, an output buffer cell, and an input buffer cell;
- and
- a TSV test circuit configured, after a first group of TSV contacts of the one or more TSV contacts is contacted with a multi-contact probe and a first voltage value is applied to each of the first group of TSV contacts via the multi-contact probe, wherein the first group of TSV contacts corresponds to a first group of TSVs of the one or more TSVs, to determine, based on a second voltage value detected at a particular TSV of the first group of TSVs via the respective bi-directional buffer circuit, whether the particular TSV corresponds to a TSV open condition or a TSV short condition;
- and
- transforming the design information to generate a data file.
3 more elements
Dependencies are inferred from the claim text.