Semiconductor memory device and data processing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsYong June Kim, Junjin Kong, Jaehong Kim, Hong Rak Son
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Abstract
Provided is a data processing method in a semiconductor memory device. The data processing method arranges data, which is to be programmed in a row and column of a nonvolatile memory device, in a row or column direction. The data processing method encodes the programmed data into a modulation code in the row or column direction such that adjacent pairs of memory cells of the nonvolatile memory device are prevented from being programmed into first and second states.
Claims18
A data processing method in a semiconductor memory device including a plurality of memory cells, the data processing method comprising:
- arranging first data, which is to be programmed in a row and column of a nonvolatile memory device, in a row or column direction;
- encoding the first data to be programmed into a modulation code in the row or column direction;
- and
- programming the encoded data into pairs of adjacent memory cells from among the plurality of memory cells, the plurality of memory cells each storing a same number of bits, the encoded data being encoded such that,
- for each of the pairs of adjacent memory cells of the plurality of memory cells into which the encoded data is being programmed, the memory cells in the pair of adjacent memory cells are prevented from being programmed into first and second states, respectively, even if the first data is data that, if programmed into the plurality of memory cells before the encoding, would result in a pair of adjacent memory cells from among the plurality of memory cells being programmed into the first and second states, respectively.
A method for preparing data to be programmed into a nonvolatile semiconductor memory device having a plurality of memory cells arranged in columns and rows, each of the plurality of memory cells having one of a plurality of threshold voltage states corresponding to the data stored in the memory cell, each of the plurality of threshold voltage states having different levels, the method comprising:
- encoding the data which is to be programmed into a modulation code in at least one of the row or column direction;
- and
- programming the encoded data into pairs of adjacent memory cells from among the plurality of memory cells, the plurality of memory cells each storing a same number of bits, the encoded data being encoded such that,
- for each of the pairs adjacent of memory cells from among the plurality of memory cells into which the encoded data is being programmed, the memory cells in the adjacent pair of memory cells are prevented from being programmed to have a threshold voltage difference greater than a reference value, even if the first data is data that, if programmed into the plurality of memory cells before the encoding, would result in a pair of adjacent memory cells from among the plurality of memory cells being programmed such that the threshold voltage difference that is not greater than the reference value, the threshold voltage difference being a difference between the levels of the threshold voltages corresponding to the memory cells in the adjacent pair of memory cells, respectively.
A semiconductor memory device, comprising:
- a nonvolatile memory including a plurality of memory cells which are arranged in a row and a column;
- and
- a memory controller configured to control the nonvolatile memory,
- wherein the memory controller is configured to arrange data which is to be programmed in a row and column of the nonvolatile memory in a row or column direction, the memory controller is configured to encode the data which is to be programmed into a run length limited code in the row or column direction, and the memory controller is configured to program the encoded data into adjacent pairs of memory cells of the nonvolatile memory, the encoded data being encoded such that adjacent pairs of memory cells from among the plurality of memory cells are prevented from being programmed into first and second states.
Dependencies are inferred from the claim text.