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US 8,806,297 B2Granted
Data recovery using additional error correction coding data
AssigneeSanDisk Technologies LLC
InventorsManuel Antonio D'Abreu, Stephen Skala
Life of this patent
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Abstract
A method in a data storage device including a memory and an error correction coding (ECC) engine. A first ECC page including a data block and first main ECC data is stored to the memory. The first main ECC data is usable by the ECC engine to correct errors in the first ECC page. A second ECC page including first additional ECC data is also stored to the memory. The first additional ECC data is usable by the ECC engine to correct errors in a single sub-block of multiple sub-blocks within the data block.
Claims19
A method comprising:
- in a data storage device including a memory and an error correction coding (ECC) engine, performing:
- storing a first ECC page including a data block and first main ECC data to the memory, the first main ECC data enabling the ECC engine to correct errors in the first ECC page;
- and
- storing a second ECC page including first additional ECC data to the memory, the first additional ECC data enabling the ECC engine to correct errors in a single sub-block of multiple sub-blocks within the data block,
- wherein the memory is a three-dimensional (3D) memory including one or more memory cells, and
- wherein the data storage device includes circuitry associated with operation of the one or more memory cells.
3 more elements
A data storage device comprising:
- an error correction coding (ECC) engine;
- a memory storing:
- a first ECC page including a data block and first main ECC data, the first main ECC data enabling the ECC engine to correct errors in the first ECC page;
- and
- a second ECC page including first additional ECC data, the first additional ECC data enabling the ECC engine to correct errors in a single sub-block of multiple sub-blocks within the data block,
- wherein the memory is a three-dimensional (3D) memory including one or more memory cells, and
- circuitry associated with operation of the one or more memory cells.
4 more elements
Dependencies are inferred from the claim text.