Method of selecting anti-fuses and method of monitoring anti-fuses
AssigneeSamsung Electronics Co., Ltd.
InventorsJu-Seop Park, Jong-Pil Son, Sin-Ho Kim, Hyoung-Joo Kim, Je-Min Ryu, Sung-Min Seo
Life of this patent
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Abstract
For selecting anti-fuses in a semiconductor memory device, a decoder block may be enabled to receive selection information for selecting the anti-fuses. The selection information is decoded in the decoder block to select at least one of the anti-fuses. Target operation is performed on the selected anti-fuses. The decoder block is disabled.
Claims15
A method of selecting anti-fuses in a semiconductor memory device, the method comprising:
- enabling a decoder block to receive selection information for selecting the anti-fuses;
- decoding the selection information in the decoder block to select at least one of the anti-fuses;
- performing target operation on the selected anti-fuses;
- and
- disabling the decoder block.
A method of monitoring anti-fuses in a semiconductor memory device, the method comprising:
- applying test voltage to an anti-pad connected to a first terminal of at least one anti-fuse, the test voltage having a level lower than a level of a program voltage;
- connecting a second terminal of the at least one anti-fuse to a ground voltage;
- measuring current from the at least one anti-fuse at the anti-pad;
- and
- determining state of the at least one anti-fuse based on the measured current.
A method of monitoring anti-fuses in a semiconductor memory device, the method comprising:
- applying test voltage to an anti-pad connected to a first terminal of at least one anti-fuse, the test voltage having a level lower than a level of a program voltage;
- connecting a second terminal of the at least one anti-fuse to a ground voltage;
- measuring a current from the at least one anti-fuse in a current measuring circuit using a resistor, the current measuring circuit being connected to the anti-fuse in parallel with the anti-pad;
- and
- determining state of the at least one anti-fuse based on the measured current.
Dependencies are inferred from the claim text.