Nonvolatile semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorsHitoshi Iwai, Tomoki Higashi, Shinichi Oosera
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Abstract
A nonvolatile semiconductor memory device comprises a plurality of memory blocks, each including a plurality of cell units and each configured as a unit of execution of an erase operation. Each of the cell units comprises a memory string, a first transistor, a second transistor, and a diode. The first transistor has one end connected to one end of the memory string. The second transistor is provided between the other end of the memory string and a second line. The diode is provided between the other end of the first transistor and a first line. The diode comprises a second semiconductor layer of a first conductivity type and a third semiconductor layer of a second conductivity type.
Claims13
A nonvolatile semiconductor memory device, comprising:
- a plurality of memory units including a plurality of memory cells, the plurality of memory cells being stacked above a substrate;
- the plurality of memory units including a first memory unit and a second memory unit, the first memory unit including a first memory cell, a second memory cell and a first transistor;
- a first line electrically connected to a first end of the first memory unit and a first end of the second memory unit, the first line being electrically connected to a first end of the first transistor;
- a second line electrically connected to a second end of the first memory unit;
- a third line electrically connected to a second end of the second memory unit;
- and
- a controller configured to perform a read operation for the first memory cell on the condition that a first voltage is applied to the second line, a second voltage is applied to the third line, the first voltage is higher than the second voltage, and a third voltage is applied to a gate of the first memory cell,
- the controller configured to perform an erase operation on the condition that a fourth voltage is applied to the second line, a fifth voltage is applied to the third line, and the fourth voltage is different from the fifth voltage.
Dependencies are inferred from the claim text.