Methods of operating semiconductor device
AssigneeSK hynix Inc.
InventorSeiichi Aritome
Life of this patent
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Abstract
A method of operating a semiconductor device according to an embodiment of the present invention includes programming selected memory cells by applying a first program voltage, which gradually rises, to a selected word line and applying a first pass voltage, which is constant, to remaining unselected word lines; and programming the selected memory cells while applying a second program voltage, which is constant, to the selected word line and applying a second pass voltage, which gradually rises, to first unselected word lines adjacent to the selected word line, when a difference between the first program voltage and the first pass voltage reaches a critical voltage difference.
Claims14
A method of operating a semiconductor device, comprising:
- programming selected memory cells by applying a first program voltage, which gradually rises, to a selected word line and applying a first pass voltage, which is constant, to remaining unselected word lines;
- and
- programming the selected memory cells while applying a second program voltage, which is constant, to the selected word line and applying a second pass voltage, which gradually rises, to first unselected word lines adjacent to the selected word line, when a difference between the first program voltage and the first pass voltage reaches a critical voltage difference.
A method of operating a semiconductor device, comprising:
- programming selected memory cells coupled to a selected word line by applying a first program voltage, gradually rising by a first step voltage, to the selected word line and by applying a ninth pass voltage, gradually rising by a lower level than the first program voltage, to remaining unselected word lines;
- and
- programming the selected memory cells while applying a second program voltage, which is constant, to the selected word line and applying a second pass voltage, gradually rising by the first step voltage, to first unselected word lines adjacent to the selected word line, when a difference between the first program voltage and the ninth pass voltage reaches a critical voltage difference while programming the selected memory cells.
Dependencies are inferred from the claim text.