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US 8,804,425 B2Granted
Selected word line dependent programming voltage
AssigneeSanDisk Technologies LLC
InventorsWenzhou Chen, Guirong Liang, Lanlan Gu, Bo Lei
Life of this patent
Estimating the term…
Abstract
Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The duration of a programming pulse may depend on the word line that is selected for programming. This could be a physical characteristic of the word line or its location on a NAND string. As one example, a shorter pulse width may be used for the programming signal when programming edge word lines.
Claims21
A method of operating non-volatile storage, comprising:
- applying a first programming voltage to a first selected word line that has a first duration that depends on the width of the first selected word line;
- and
- applying a second programming voltage to a second selected word line that has a second duration that depends on the width of the second selected word line, the first selected word line is wider than the second selected word line, the first programming voltage applied to the first selected word line is shorter in duration than the second programming voltage applied to the second selected word line.
A non-volatile storage device, comprising:
- a plurality of non-volatile storage elements arranged as NAND strings;
- a plurality of word lines associated with the plurality of non-volatile storage elements;
- and
- one or more managing circuits in communication with the plurality of word lines, the one or more managing circuits apply a first programming voltage to a first selected word line of the plurality of word lines, the programming voltage has a first duration that depends on the width of the first selected word line, the one or more managing circuits apply a second programming voltage to a second selected word line of the plurality of word lines, the second programming voltage has a second duration that depends on the width of the second selected word line, the first selected word line is wider than the second selected word line, the first programming voltage applied to the first selected word line is shorter in duration than the second programming voltage applied to the second selected word line.
1 more element
A method of operating non-volatile storage, comprising:
- programming non-volatile storage elements associated with a plurality of word lines in a first block, the non-volatile storage elements are arranged as a plurality of NAND strings each having a first end and a second end, each of the word lines having a position between the first end and the second end;
- determining a final program voltage or a number of program loops that it takes to complete the programming of each of the word lines in the first block;
- determining a pulse width duration for each position of the word lines based on the final program voltage or the number of program loops;
- and
- programming word lines in other blocks using the pulse width duration that was determined for each position.
2 more elements
A non-volatile storage device, comprising:
- a first block and a second block of non-volatile storage elements arranged as NAND strings, each of the NAND strings having a first end and a second end;
- a first plurality of word lines associated with the non-volatile storage elements in the first block, the first plurality of word lines each having a position between the first end and the second end of the NAND strings in the first block;
- a second plurality of word lines associated with the non-volatile storage elements in the second block, the second plurality of word lines each having a position between the first end and the second end of the NAND strings in the second block;
- and
- one or more managing circuits in communication with the first plurality of word lines and the second plurality of word lines, the one or more managing circuits determine a final program voltage or a number of program loops that it takes to complete the programming of each of the first plurality of word lines in the first block, the one or more managing circuits determine a pulse width duration for each position of the word lines based on the final program voltage or the number of program loops, the one or more managing circuits program the second plurality of word lines in the second block using the pulse width duration that was determined for each position.
2 more elements
A 3D non-volatile storage device, comprising:
- a three-dimensional (3D) memory array of non-volatile storage elements arranged as NAND strings;
- a plurality of word lines associated with the non-volatile storage elements;
- and
- one or more managing circuits in communication with the plurality of word lines, the one or more managing circuits apply a first programming voltage to a first selected word line of the plurality of word lines, the programming voltage has a first duration that depends on the width of the first selected word line, the one or more managing circuits apply a second programming voltage to a second selected word line of the plurality of word lines, the second programming voltage has a second duration that depends on the width of the second selected word line, the first selected word line is wider than the second selected word line, the first programming voltage applied to the first selected word line is shorter in duration than the second programming voltage applied to the second selected word line.
1 more element
Dependencies are inferred from the claim text.