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US 8,804,424 B2Granted
Memory with three transistor memory cell device
AssigneeMicron Technology, Inc.
InventorsKoji Sakui, Peter Feeley
Life of this patent
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Abstract
Memory, memory devices, and a method for a backup sequence are disclosed. In one such memory device, sense circuitry and page buffers are coupled between a three transistor memory cell device and a non-volatile memory device. Enable/disable gates enable selective access to the sense circuitry and page buffers by either the three transistor memory cell device or the non-volatile memory device.
Claims16
A memory comprising:
- a three transistor memory cell device coupled to a first data line;
- a plurality of strings of memory cells;
- a plurality of second data lines, the second data lines of the plurality of second data lines respectively coupled to the strings of memory cells of the plurality of strings of memory cells;
- sense circuitry coupled between at least one of the plurality of second data lines and the first data line;
- a first enable/disable transistor coupled between the three transistor memory cell device and the sense circuitry and configured to couple the first data line to the sense circuitry;
- and
- a plurality of second enable/disable transistors, each of the plurality of second enable/disable transistors configured to couple a respective one of the plurality of second data lines to the sense circuitry;
- wherein the plurality of second enable/disable transistors are configured so that all of the plurality of second enable/disable transistors are disabled when the first enable/disable transistor is enabled.
5 more elements
A memory device comprising:
- an array comprising a plurality of series strings of non-volatile memory cells, the series strings of non-volatile memory cells of the plurality of series strings of non-volatile memory cells respectively coupled to first data lines of a plurality of first data lines of the array;
- a plurality of three transistor memory cell devices, the three transistor memory cell devices of the plurality of three transistor memory cell devices respectively coupled to second data lines of a plurality of second data lines;
- sense circuitry coupled between the plurality of first data lines and the plurality of second data lines;
- a plurality of first enable/disable gates, each of the plurality of first enable/disable gates configured to couple a respective one of the plurality of first data lines to the sense circuitry;
- and
- a plurality of second enable/disable gates, each of the plurality of second enable/disable gates configured to couple a respective one of the plurality of second data lines to the sense circuitry;
- wherein the plurality of first enable/disable transistors are configured so that all of the plurality of first enable/disable transistors are disabled when the plurality of second enable/disable gates are enabled.
4 more elements
A memory comprising:
- a three transistor memory cell device comprising a first memory cell and a first select transistor coupled between the first memory cell and a first data line;
- plurality of strings of second memory cells;
- a plurality of second data lines;
- a plurality of second select transistors, each of the plurality of second select transistors coupled between a respective one of each of the plurality of strings of second memory cells and a respective one of each of the plurality of second data lines;
- sense circuitry coupled between the first data line and the plurality of second data lines;
- a first enable/disable transistor coupled between the first select transistor and the sense circuitry;
- and
- a plurality of second enable/disable transistors, each of the plurality of second enable/disable transistors coupled between a respective one of the plurality of second select transistors and the sense circuitry;
- wherein the plurality of second enable/disable transistors are configured so that all of the plurality of second enable/disable transistors are disabled when the first enable/disable transistor is enabled.
6 more elements
A memory comprising:
- a three transistor memory cell device comprising a first memory cell and a first select transistor coupled between the first memory cell and a first data line;
- a plurality of strings of second memory cells;
- a plurality of second data lines;
- a plurality of second select transistors, each of the plurality of second select transistors coupled between a respective one of each of the plurality of strings of second memory cells and a respective one of each of the plurality of second data lines;
- a page buffer coupled between the first data line and the plurality of second data lines;
- a first enable/disable transistor coupled between the first select transistor and the page buffer;
- and
- a plurality of second enable/disable transistors, each of the plurality of second enable/disable transistors coupled between a respective one of the plurality of second select transistors and the page buffer;
- wherein the plurality of second enable/disable transistors are configured so that all of the plurality of second enable/disable transistors are disabled when the first enable/disable transistor is enabled.
6 more elements
Dependencies are inferred from the claim text.