Adaptive voltage range management in non-volatile memory

A method comprising:

• operating a memory element of an electronic memory device in an adaptive voltage range, wherein the memory element comprises at least a lower state and an upper state;
• implementing a first adjustment of an abode characteristic of the lower state in response to a trigger event;
• and
• implementing a second adjustment of an abode characteristic of the upper state in response to the trigger event, wherein the first adjustment is different from the second adjustment.

A method, comprising:

• configuring a memory element of an electronic memory device with a first state and a second state;
• configuring a voltage range module to reduce a first voltage range of the memory element to a second, compressed voltage range;
• and
• adjusting an abode characteristic of the first state and an abode characteristic of the second state in response to a trigger event.