Spin torque transfer memory cell structures and methods
AssigneeMicron Technology, Inc.
InventorsSteven J. Kramer, Gurtej S. Sandhu
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Abstract
Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material. The tunneling barrier material is a multiferroic material and the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are positioned between a first electrode and a second electrode.
Claims22
A memory cell structure, comprising:
- a ferromagnetic storage material, a pinned ferromagnetic material, and an antiferromagnetic material positioned between a first electrode and a second electrode;
- a multiferroic material positioned between the ferromagnetic storage material and the pinned ferromagnetic material;
- and
- a third electrode configured to provide an electric field to the multiferroic material responsive to a voltage applied between the third electrode and at least one of:
- the first electrode;
- and
- the second electrode.
A memory cell, comprising:
- a stack structure including:
- a first magnetic tunneling junction (MTJ) element positioned between a first electrode and a second electrode, wherein a tunneling barrier material of the first MTJ comprises a first multiferroic material;
- a second MTJ element positioned between the first electrode and the second electrode, wherein a tunneling barrier material of the second MTJ comprises a second multiferroic material;
- wherein at least one of the first and the second multiferroic materials are located between a third electrode and a fourth electrode;
- and
- wherein a dielectric material is located between the at least one of the first and the second multiferroic material and at least one of the third and the fourth electrode.
A memory cell, comprising:
- a magnetic tunneling junction (MTJ) element located between a first electrode and a second electrode, wherein a tunneling barrier material of the MTJ is a multiferroic material;
- and
- wherein the multiferroic material is located between a third electrode and a fourth electrode;
- and
- wherein a dielectric material is located between the multiferroic material and at least one of the third electrode and the fourth electrode.
A method of operating a memory cell, the method comprising:
- altering a magnetization direction of a free ferromagnetic storage material of a magnetic tunneling junction (MTJ) element of the memory cell by providing an electric field to a multiferroic tunneling barrier material of the MTJ element;
- wherein providing the electric field to the multiferroic tunneling barrier material includes applying a voltage difference between a first gate electrode and a second gate electrode of an access device corresponding to the memory cell;
- and
- wherein a dielectric material is located between the multiferroic tunneling barrier material and at least one of the first gate electrode and the second gate electrode.
Dependencies are inferred from the claim text.