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US 8,804,412 B2Granted
Semiconductor memory apparatus
AssigneeSK hynix Inc.
InventorsTaek Sang Song, Dae Han Kwon
Life of this patent
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Abstract
A semiconductor memory apparatus includes a resistive memory cell; a data sensing unit configured to sense an output voltage, formed by a sensing current supplied to the resistive memory cell, based on a reference voltage, and output data having a value corresponding to the sensing result; and a reference voltage generation unit comprising a dummy memory cell including first and second resistors having first and second resistance values, respectively, and configured to output a voltage formed by the sensing current supplied to the dummy memory cell as the reference voltage.
Claims10
A semiconductor memory apparatus comprising:
- a resistive memory cell;
- a data sensing unit configured to sense an output voltage, formed by a sensing current supplied to the resistive memory cell, based on a reference voltage, and output data having a value corresponding to the sensing result;
- and
- a reference voltage generation unit comprising a dummy memory cell including first and second resistors having first and second resistance values, respectively, and configured to output a voltage formed by the sensing current supplied to the dummy memory cell as the reference voltage.
1 more element
Dependencies are inferred from the claim text.