Stacked MRAM device and memory system having the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHyung-Rok Oh, Se-Chung Oh
Life of this patent
Estimating the term…
Abstract
Provided is a stacked magnetic random access memory (MRAM) in which memory cell arrays having various characteristics or functions are included in memory cell layers. The stacked MRAM device includes a semiconductor substrate and at least one memory cell layers. The semiconductor substrate includes a first memory cell array. Each of the memory cell layers includes a memory cell array having a different function from the first memory cell array and is stacked on the first memory cell array. As a result, the stacked MRAM device has high density, high performance, and high reliability.
Claims18
A stacked magnetic random access memory (MRAM) device comprising:
- a semiconductor substrate including a first memory cell array including normal data cells configured to store data;
- a second memory cell array disposed on the first memory cell array, the second memory cell array including error-correction code (ECC) cells configured to store ECC data or reference cells configured to store reference resistances;
- and
- one or more additional memory cell arrays including at least a third memory cell array including one-time programming (OTP) cells to store data only one time, wherein the third memory cell array is stacked on the second memory cell array.
A magnetic random access memory (MRAM) device comprising:
- a substrate including a control circuit;
- a first memory cell array disposed on the substrate, the first memory cell array including a plurality of memory cells, wherein each of the plurality of memory cells of the first memory cell array includes a first magnetic element and a first access element electrically connected to the first magnetic element, and wherein the first magnetic element includes a first pinned magnetic layer, a first free magnetic layer having a first thickness, and a first tunnel barrier layer between the first pinned magnetic layer and the first free magnetic layer;
- and
- a second memory cell array stacked on the first memory cell array, the second memory cell array including a plurality of memory cells, wherein each of the plurality of memory cells of the second memory cell array includes a second magnetic element and a second access element electrically connected to the second magnetic element, and wherein the second magnetic element includes a second pinned magnetic layer, a second free magnetic layer having a second thickness different from the first thickness, and a second tunnel barrier layer between the second pinned magnetic layer and the second free magnetic layer,
- wherein the control circuit is configured to drive the first and second memory cell arrays.
A magnetic random access memory (MRAM) device comprising:
- a substrate;
- a first magnetic element array disposed on the substrate, the first magnetic element array including a plurality of magnetic elements, wherein each of the plurality of magnetic elements of the first magnetic element array includes a first pinned magnetic layer, a first tunnel barrier layer, and a first free magnetic layer having a first thickness;
- and
- a second magnetic element array stacked on the first magnetic element array, the second magnetic element array including a plurality of magnetic elements, wherein each of the plurality of magnetic elements of the second magnetic element array includes a second pinned magnetic layer, a second tunnel barrier layer, and a second free magnetic layer having a second thickness different from the first thickness.
Dependencies are inferred from the claim text.