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US 8,804,408 B2Granted
Semiconductor storage device
AssigneeKabushiki Kaisha Toshiba
InventorSusumu Shuto
Life of this patent
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Abstract
A semiconductor storage device according to the present embodiment includes a magnetic tunnel junction element capable of storing data according to a change in resistance state and rewriting the data using a current. A cell transistor is provided for the magnetic tunnel junction element and is placed in a conducting state when a current is allowed to flow through the magnetic tunnel junction element. A current limiter limits a current flowing through the cell transistor and the magnetic tunnel junction element upon data writing.
Claims19
A semiconductor storage device comprising:
- a magnetic tunnel junction element configured to store data based on a change in resistance state and to rewrite the data using a current;
- a cell transistor configured to enter a conducting state when a current flows through the magnetic tunnel junction element;
- and
- a current limiter configured to limit a current flowing through the cell transistor and the magnetic tunnel junction element upon data rewriting.
1 more element
Dependencies are inferred from the claim text.