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US 8,804,400 B2Granted
Variable resistance memory device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSanghyun Hong, Jaekyu Lee, Yong Kwan Kim
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Abstract
According to an example embodiment, a variable resistance memory device includes a lower electrode that includes a spacer-shaped first sub lower electrode and a second sub lower electrode covering a curved sidewall of the first sub lower electrode. The second sub lower electrode extends upward to protrude above the top of the first sub lower electrode. The lower electrode includes an upward-tapered shape.
Claims17
A variable resistance memory device, comprising:
- a word line;
- a bit line crossing over the word line;
- a selection device between the word line and the bit line,
- a lower electrode between the selection device and the bit line, the lower electrode including,
- a first sub lower electrode having an upward-tapered spacer shape, and
- a second sub lower electrode covering a sidewall of the first sub lower electrode and protruding above a top of the first sub lower electrode, and
- a variable resistance pattern between the lower electrode and the bit line.
4 more elements
A variable resistance memory device comprising:
- at least one memory cell connected to a bit line and a word line, the at least one memory cell including,
- a selection element,
- a variable resistance element, and
- a lower electrode having a first sub electrode and a second sub electrode between the selection element and the variable resistance element,
- the first sub electrode having one curved surface,
- the second sub electrode having a curved portion covering the curved surface of the first sub electrode, and
- the second sub electrode having a protruding portion between the first sub electrode and one of the variable resistance element and the selection element.
4 more elements
Dependencies are inferred from the claim text.