Multi-function resistance change memory cells and apparatuses including the same
AssigneeMicron Technology, Inc.
InventorScott Sills
Life of this patent
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Abstract
Various embodiments comprise apparatuses having a number of memory cells including drive circuitry to provide signal pulses of a selected time duration and/or amplitude, and an array of resistance change memory cells electrically coupled to the drive circuitry. The resistance change memory cells may be programmed for a range of retention time periods and operating speeds based on the received signal pulse. Additional apparatuses and methods are described.
Claims40
An apparatus comprising a plurality of resistance change memory (RCM) cells, the apparatus comprising:
- a first region of the RCM cells;
- a second region of the RCM cells;
- and
- drive circuitry to selectively provide one of a plurality of signal pulse types to the first region of the RCM cells and to selectively provide a different one of the plurality of signal pulse types to the second region of the RCM cells, each of the plurality of signal pulse types having a different attribute and corresponding to one of a plurality of different memory function types, the plurality of different memory function types including volatile memory, storage class memory, and one-time programmable memory.
An apparatus, comprising:
- a plurality of memory regions, each of the plurality of memory regions including a respective plurality of resistance change memory cells;
- control and select circuitry to determine a memory function type to emulate for information to be stored in the apparatus and to select one of the plurality of memory regions to store the information, the memory function type to include at least one of the group comprising volatile memory, storage class memory, and one-time programmable memory;
- and
- drive circuitry to provide to the selected one of the plurality of memory regions a pulse configured to emulate the determined memory function type for the information.
A method of operating a plurality of resistance change memory (RCM) cells;
- the method comprising:
- determining one of a plurality of memory function types to emulate, the plurality of different memory function types including volatile memory, storage class memory, and one-time programmable memory;
- and
- applying a programming pulse, having an attribute configured to emulate the determined memory function type, to a selected one of the plurality of RCM cells.
A memory apparatus, comprising:
- a resistance change memory (RCM) cell;
- and
- drive circuitry electrically coupled to the RCM cell to provide a signal pulse, the signal pulse being configurable in both amplitude and time duration to vary a data retention time of the RCM cell by controlling both a height parameter and a radial growth parameter of a localized conduction region of the RCM cell.
A method of operating a memory device, the method comprising:
- selecting one of a plurality of memory function types to emulate within the memory device, the plurality of memory function types including volatile memory, storage class memory, and one-time programmable memory;
- selecting an energy level per memory cell to be provided in a signal pulse to emulate the selected memory function type;
- and
- applying the signal pulse to a memory cell of the memory device.
A method of programming a resistance change memory (RCM) cell, the method comprising:
- determining a retention period needed for information to be stored in the RCM cell;
- and
- varying an amount of power consumed to program the RCM cell depending upon the determined retention period, the amount of power to control both a height parameter and a radial growth parameter of a localized conduction region of the RCM cell.
An apparatus comprising:
- a first group of resistance change memory (RCM) cells emulating a first memory type function;
- and
- a second group of resistance change memory (RCM) cells emulating a second memory type function, the first memory type function and the second memory type function including volatile memory, storage class memory, and one-time programmable memory, the first group of RMC cells and the second group of RMC cells being formed on a single integrated circuit.
A method of programming a resistance change memory (RCM) cell, the method comprising:
- determining a endurance level needed for information to be stored in the RCM cell;
- and
- varying an amount of power consumed to program the RCM cell depending upon the determined endurance level, the amount of power to control both a height parameter and a radial growth parameter of a localized conduction region of the RCM cell.
A method of programming a resistance change memory (RCM) an RMC cell, the method comprising:
- determining an operating speed needed for information to be stored in the cell;
- and
- varying an amount of power consumed to program the RCM cell depending upon the determined operating speed, the amount of power to control both a height parameter and a radial growth parameter of a localized conduction region of the RCM cell.
Dependencies are inferred from the claim text.