Reversible resistive memory using diodes formed in CMOS processes as program selectors

An electronics system, comprising:

• a processor;
• and
• a reversible resistive memory operatively connected to the processor, the reversible resistive memory including at least:
• a plurality of reversible resistive cells, each including a reversible resistive film and a diode as program selector having at least a first active region with a first type of dopant for a first terminal of the diode, and a second active region with a second type of dopant for a second terminal of the diode, both active regions being fabricated from sources or drains of CMOS devices and residing in a common CMOS well, the first terminal of the diode being coupled to a first terminal of the reversible resistive film, the reversible resistive film being programmable by conducting a current flowing through the reversible resistive film and the program selector, wherein the current is high and/or short duration for one state and low and/or long duration for another state;
• a plurality of local wordlines, each coupled to a plurality of the reversible resistive cells via the second terminal of the diodes and having a first resistivity;
• a plurality of global wordlines, each coupled to at least one of the local wordlines and having a second resistivity;
• and
• a plurality of bitlines, each coupled to a plurality of the reversible resistive cells via the second terminal of reversible resistive film.

A method for programming a reversible resistive memory, comprising:

• providing a plurality of reversible resistive cells, each including an reversible resistive film and a diode, the diode serving as a program selector and having at least a first active region with a first type of dopant for a first terminal of the diode, and having a second active region with a second type of dopant for a second terminal of the diode, both active regions being fabricated from sources or drains of CMOS devices and residing in a common CMOS well, the first terminal of the diode being coupled to a first terminal of the reversible resistive film, the reversible resistive film being programmable reversibly by conducting a current flowing through the reversible resistive film;
• providing a plurality of local wordlines, each coupled to a plurality of the reversible resistive cells via the second terminal of the diodes and having a first resistivity;
• providing a plurality of global wordlines, each coupled to at least one of the local wordlines and having a second resistivity;
• providing a plurality of bitlines, each coupled to a plurality of the reversible resistive cells via a second terminal of reversible resistive film;
• and
• programming at least one of the reversible resistive cells by applying voltages to a selected one of the global wordlines and to a selected one of the bitlines, and generating a high and/or short-duration current to reversibly program into one state and a low and/or long-duration current to reversibly program into another state.