Semiconductor memory device and method of operating the same
AssigneeSK hynix Inc.
InventorSung Hoon Ahn
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Abstract
A semiconductor memory device includes memory blocks that each include memory cells coupled to bit lines, a column masking circuit configured to output data change signals in response to an address signal indicating bit lines of selected columns among a plurality of columns, and an operation circuit configured to store data of the memory cells transferred through the bit lines and simultaneously change data transferred through the bit lines of the selected columns into operation pass data in response to the data change signals.
Claims10
A semiconductor memory device, comprising:
- memory blocks that each include memory cells coupled to bit lines;
- a column masking circuit configured to output data change signals in response to an address signal indicating bit lines of selected columns among a plurality of columns;
- and
- an operation circuit configured to store data of the memory cells transferred through the bit lines and simultaneously change data transferred through the bit lines of the selected columns into operation pass data in response to the data change signals.
A method of operating a semiconductor memory device, the method comprising:
- latching column data for indicating a selected column of a plurality of columns;
- latching data sensed from memory cells;
- changing data sensed from memory cells of the selected column into operation pass data in response to the column data;
- and checking whether the memory cells are programmed or not by using data sensed from memory cells of remaining columns and the operation pass data, wherein the data sensed from the memory cells of the selected column are simultaneously changed into the operation pass data in response to the column data.
Dependencies are inferred from the claim text.