Electrophoretic display device and method for fabricating the same
AssigneeLG Display Co., Ltd.
InventorsOh-Nam Kwon, Yong-In Park
Life of this patent
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Abstract
Disclosed is an electrophoretic display device and a fabrication method thereof, and the electrophoretic display device may include a thin-film transistor formed on a lower substrate, a pixel electrode connected to the thin-film transistor, side electrodes formed at periphery of the pixel electrode, a partition wall formed on the side electrode, fluid including an electrophoretic particles formed between the partition walls, and an upper substrate adhered on the lower substrate and formed with a common electrode on the rear surface thereof.
Claims16
An electrophoretic display device, the device comprising:
- thin-film transistors (TFTs) formed in a matrix form on a lower substrate having a pixel region in which are arranged unit pixel regions;
- a passivation layer covering the lower substrate on which is formed the thin-film transistors;
- pixel electrodes formed on the passivation layer and connected to the thin-film transistors, respectively;
- a TFT blocking pattern formed on the pixel electrode at an upper portion of each of the thin-film transistors (TFTs);
- a side electrode formed on the passivation layer and enclosing the pixel electrodes and spaced with the pixel electrodes, wherein the side electrode is formed in one body on the passivation layer;
- a partition wall between the pixel electrodes and dividing the pixel region into the unit pixel region;
- a fluid including an electrophoretic particles filled between the partition wall;
- and
- an upper substrate attached with the lower substrate and formed with a common electrode on a lower surface thereof,
- wherein the TFT blocking pattern and the side electrode are formed of the same conductive metal material.
A method of fabricating an electrophoretic display device, the method comprising:
- forming thin-film transistors in a matrix form on a lower substrate having a pixel region in which are arranged unit pixel regions;
- forming a passivation layer covering the thin-film transistors;
- forming pixel electrodes on the passivation layer and connected to the thin-film transistors, respectively;
- forming a TFT blocking pattern on the pixel electrode at an upper portion of each of the thin-film transistors (TFTs);
- forming a side electrode on the passivation layer and enclosing the pixel electrodes and spaced with the pixel electrodes, wherein the side electrode is formed in one body on the passivation layer;
- forming a partition wall dividing the pixel region into the unit pixel regions and formed at between the pixel electrodes on the passivation layer;
- filling a fluid including electrophoretic particles between the partition wall;
- and
- attaching an upper substrate on the lower substrate, the upper substrate is provided with a common electrode on a lower surface thereof,
- wherein the TFT blocking pattern and the side electrode are comprised of the same conductive metal layer, and the TFT blocking pattern and the side electrode are simultaneously formed.
Dependencies are inferred from the claim text.