System and method for nondestructively measuring concentration and thickness of doped semiconductor layers

A method of analyzing at least one doped semiconductor layer, comprising:

• injecting charge carriers into a region of a sample to enhance index contrast between at least one doped layer of the sample and a substrate of the sample;
• illuminating a surface of the sample proximate to the injected region of the sample with incrementally separated beams of illumination having a first wavelength and incrementally separated beams of illumination having at least one additional wavelength, wherein the incrementally separated illumination beams are provided by one or more probe sources based on a disposition of incrementally separated illumination beams provided by a pump source;
• detecting illumination having the first wavelength and illumination having the at least one additional wavelength reflected from the surface of the sample;
• acquiring information associated with the reflected illumination having the first wavelength and information associated with the reflected illumination having the at least one additional wavelength;
• and
• determining at least one of an active carrier concentration and a thickness of the at least one doped layer of the sample based upon a comparison of the information associated with the reflected illumination having the first wavelength and the information associated with the reflected illumination having the at least one additional wavelength.

A method for analyzing at least one semiconductor layer, comprising:

• injecting charge carriers into a region of a sample to enhance index contrast between at least one layer of the sample and a substrate of the sample;
• illuminating a surface of the sample proximate to the injected region of the sample with incrementally separated beams of illumination having a first wavelength and incrementally separated beams of illumination having at least one additional wavelength, wherein the incrementally separated illumination beams are provided by one or more probe sources based on a disposition of incrementally separated illumination beams provided by a pump source;
• detecting illumination having the first wavelength reflected from the surface of the sample and illumination having the at least one additional wavelength reflected from the surface of the sample;
• acquiring information associated with the reflected illumination having the first wavelength and information associated with the reflected illumination having the at least one additional wavelength;
• and
• determining a thickness of the at least one layer of the sample and at least one of an active carrier concentration and a damage level of the at least one layer of the sample based upon a comparison of the information associated with the reflected illumination having the first wavelength and the information associated with the reflected illumination having the at least one additional wavelength.