Method, apparatus and system for providing improved full well capacity in an image sensor pixel
AssigneeOmniVision Technologies, Inc.
InventorsSohei Manabe, Keh-Chiang Ku, Vincent Venezia, Hsin-Chih Tai, Duli Mao, Howard E. Rhodes
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Abstract
Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle.
Claims20
An image sensor apparatus comprising:
- a pixel array including:
- a first pixel structure including:
- a first photodiode in a semiconductor layer, the first photodiode including a first implant region and a second implant region at least partially overlapping the first implant region, the first implant region is skewed according to a first implant angle;
- and
- a first transfer gate adjoining a surface of the semiconductor layer;
- and
- a second pixel structure including a second transfer gate adjoining the surface of the semiconductor layer, wherein a boundary of the first implant region is aligned with a rim of the second transfer gate according to the first implant angle;
- and
- readout circuitry coupled to the pixel array, the readout circuitry to generate image data based on signals from the pixel array.
A pixel array comprising:
- a first pixel structure including:
- a first photodiode in a semiconductor layer, the first photodiode including a first implant region and a second implant region at least partially overlapping the first implant region, wherein the first implant region is skewed according to a first implant angle;
- and
- a first transfer gate adjoining a surface of the semiconductor layer;
- and
- a second pixel structure including a second transfer gate adjoining the surface of the semiconductor layer, wherein a boundary of the first implant region is aligned with a rim of the second transfer gate according to the first implant angle.
A non-transitory computer-readable storage medium embodying a design structure, the design structure comprising:
- first data representing a first pixel structure including:
- a first photodiode in a semiconductor layer, the first photodiode including:
- a first implant region and a second implant region at least partially overlapping the first implant region, wherein the first implant region is skewed according to a first implant angle;
- and
- a first transfer gate adjoining a surface of the semiconductor layer;
- and
- second data representing a second pixel structure including a second transfer gate adjoining the surface of the semiconductor layer, wherein a boundary of the first implant region is aligned with a rim of the second transfer gate according to the first implant angle.
Dependencies are inferred from the claim text.