Power amplification apparatus
AssigneeKabushiki Kaisha Toshiba
InventorRyo Mochizuki
Life of this patent
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Abstract
According to one embodiment, a power amplification apparatus includes an field effect transistor (FET), a first decoupling element, a power supply circuit, a second decoupling element, and a third decoupling element. The FET is arranged within a package having an input terminal and an output terminal, and power-amplify an input signal from the input terminal to a transmission signal. The first decoupling element decreases an inductance component of the transmission signal output from the FET. The power supply circuit supplies a driving power to the FET. The second decoupling element cut an RF component. The third decoupling element decreases an impedance of a drain bias circuit over a wide band.
Claims16
A power amplification apparatus comprising:
- a field effect transistor (FET) arranged within a package having an input terminal and an output terminal, and configured to power-amplify an input signal from the input terminal to a transmission signal, for a radio frequency (RF) band, including a first signal and a second signal which include a predetermined frequency difference and level difference, and supply the transmission signal to the output terminal;
- a first decoupling element configured to decrease an inductance component of the transmission signal output from the FET, and output a signal with decreased inductance component;
- a power supply circuit configured to supply a driving power to the FET within the package;
- a second decoupling element configured to cut an RF component from the output terminal for the power supply circuit;
- and
- a third decoupling element arranged in parallel between the first decoupling element and the second decoupling element, and configured to decrease an impedance of a drain bias circuit over a wide band while suppressing anti-resonance with the first decoupling element and the second decoupling element.
A power amplification apparatus comprising:
- a field effect transistor (FET) arranged within a package having an input terminal and an output terminal, and configured to power-amplify, to a transmission signal for a radio frequency (RF) band, a multilevel modulation input signal which is input to the input terminal and has a predetermined bandwidth and level difference, and supply the transmission signal to the output terminal;
- a first decoupling element configured to decrease an inductance component of the transmission signal output from the FET, and output a signal with decreased inductance component;
- a power supply circuit configured to supply a driving power to the FET within the package;
- a second decoupling element configured to cut an RF component from the output terminal for the power supply circuit;
- and
- a third decoupling element arranged in parallel between the first decoupling element and the second decoupling element, and configured to decrease an impedance of a drain bias circuit over a wide band while suppressing anti-resonance with the first decoupling element and the second decoupling element.
Dependencies are inferred from the claim text.