Solid-state imaging device
AssigneeKabushiki Kaisha Toshiba
InventorEiji Sato
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AssigneeKabushiki Kaisha Toshiba
InventorEiji Sato
Estimating the term…
A semiconductor element layer has a pixel region in which a plurality of photodiodes are provided and a peripheral circuit region in which a peripheral circuit for processing the device is provided, a power supply line to supply an electric power to the peripheral circuit, provided at a first side of the semiconductor element layer in the peripheral circuit region, a first wiring layer to supply the electric power to the power supply line, provided at a second side of the semiconductor element layer in the peripheral circuit region, and a plurality of first through-electrodes, provided in the peripheral circuit region and passing through the semiconductor element layer between the first side and the second side. At least a part of the first through-electrodes electrically connect between the power supply line and the first wiring layer.
A solid-state imaging device, comprising:
A method for supplying an electric power to a peripheral circuit of a solid-state imaging device that has a semiconductor element layer having a pixel region in which a plurality of photodiodes are provided and a peripheral circuit region in which the peripheral circuit for processing of signals generated from the pixels is provided, the method comprising:
Dependencies are inferred from the claim text.