Analog circuit and semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama, Atsushi Hirose, Masashi Tsubuku, Kosei Noda
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Abstract
An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
Claims20
A semiconductor device comprising:
- a first transistor;
- a second transistor;
- a capacitor;
- a light-emitting element;
- a first line;
- and
- a second line,
- wherein one of a source and a drain of the first transistor is electrically connected to the first line,
- wherein the other one of the source and the drain of the first transistor is electrically connected to a gate of the second transistor and one terminal of the capacitor,
- wherein the other one terminal of the capacitor is electrically connected to one of a source and a drain of the second transistor and the light-emitting element,
- wherein the other one of the source and the drain of the second transistor is electrically connected to the second line,
- wherein each of the first transistor and the second transistor comprises an oxide semiconductor, and
- wherein an off-state current of the first transistor is 10−13 A or less at a drain voltage of 1V to 10V and a gate voltage of −5V to −20V.
A semiconductor device comprising:
- a first transistor;
- a second transistor;
- a capacitor;
- a light-emitting element;
- a first line;
- and
- a second line,
- wherein one of a source and a drain of the first transistor is electrically connected to the first line,
- wherein the other one of the source and the drain of the first transistor is electrically connected to a gate of the second transistor and one terminal of the capacitor,
- wherein the other one terminal of the capacitor is electrically connected to one of a source and a drain of the second transistor and the light-emitting element,
- wherein the other one of the source and the drain of the second transistor is electrically connected to the second line,
- wherein each of the first transistor and the second transistor comprises an oxide semiconductor,
- wherein the oxide semiconductor comprises In, Ga, and Zn, and
- wherein an off-state current of the first transistor is 10−13 A or less at a drain voltage of 1V to 10V and a gate voltage of −5V to −20V.
Dependencies are inferred from the claim text.