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US 8,803,324 B2Granted
Semiconductor devices and methods of manufacturing the same
AssigneeSK hynix Inc.
InventorYoung Jin Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device and methods directed toward preventing a leakage current between a contact plug and a line adjacent to the contact plug, and minimizing capacitance between adjacent lines.
Claims9
A semiconductor device, comprising:
- a first interlayer insulating layer;
- an etch stop layer formed on the first interlayer insulating layer;
- contact holes formed to penetrate the etch stop layer and the first interlayer insulating layer;
- contact plugs formed in the respective contact holes and configured to have a top surface lower than a top surface of the etch stop layer;
- a second interlayer insulating layer formed over the contact plugs and the etch stop layer;
- line trenches formed to penetrate the second interlayer insulating layer, wherein the respective contact plugs are exposed in the line trenches;
- and
- lines formed in the trenches and coupled to the respective contact plugs,
- wherein a difference A between a height of the top surface of the contact plugs and the height of the top surface of the etch stop layer is determined on condition that a distance D between the contact plug and the lines adjacent to each other is a critical distance k or higher, wherein the critical distance k is a distance that does not generate a leakage current between the contact plug and the lines adjacent to each other.
6 more elements
A semiconductor device comprising:
- a first interlayer insulating layer;
- an etch stop layer formed on the first interlayer insulating layer;
- contact holes formed to penetrate the etch stop layer and the first interlayer insulating layer;
- contact plugs formed in the respective contact holes and configured to have a top surface lower than a top surface of the etch stop layer;
- a second interlayer insulating layer formed over the contact plugs and the etch stop layer;
- line trenches formed to penetrate the second interlayer insulating layer, wherein the respective contact plugs are exposed in the line trenches;
- and
- lines formed in the trenches and coupled to the respective contact plugs,
- wherein each of the lines includes a barrier layer formed on an inner surface of the trench and a metal layer formed on the barrier layer, and regions corresponding to openings of the etch stop layer, from the trenches are fully filled with the barrier layer.
6 more elements
Dependencies are inferred from the claim text.