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US 8,803,322 B2Granted
Through substrate via structures and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKu-Feng Yang, Tsang-Jiuh Wu, Yi-Hsiu Chen, Ebin Liao, Yuan-Hung Liu, Wen-Chih Chiou
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Abstract
The embodiments of forming a through substrate via (TSV) structure described enable reducing risk of damaging gate structures due to over polishing of an inter-level dielectric layer (ILD) layer. The TSV structure with a wider opening near one end also enables better gapfill.
Claims20
A structure comprising:
- a substrate;
- a through-substrate-via (TSV) extending into the substrate;
- a dielectric layer having a first portion that is formed over the substrate and a second portion that lines the TSV, wherein the first portion and the second portion comprise a same material;
- and
- a metal layer formed over the substrate, wherein the metal layer is embedded in the first portion of the dielectric layer, and wherein the second portion of the dielectric layer terminates at an upper surface inside the TSV, the upper surface below a lower surface of the metal layer,
- wherein the TSV extends over the upper surface of the second portion of the dielectric layer.
3 more elements
A structure comprising:
- a substrate;
- an etch stop layer (ESL) on the substrate;
- a through-substrate-via (TSV) extending into the substrate, the TSV extending through the ESL;
- and
- a metal layer formed over the substrate and extending through the ESL, wherein the metal layer is embedded in a dielectric layer, wherein the dielectric layer lines the TSV, wherein the metal layer has an upper surface planarized to an upper surface of a conductive material filled in the TSV, and wherein the TSV is wider at an end near the metal layer, and a top surface the end of the TSV near the metal layer extends above a top surface of the dielectric layer.
2 more elements
A method of forming a structure, the method comprising:
- forming a through-substrate-via (TSV) opening in a substrate;
- depositing a dielectric layer on the substrate, wherein the dielectric layer lines the TSV opening,
- patterning and etching the dielectric layer to form an opening for a metal structure and a wider opening at one end of the TSV opening in a first portion of the dielectric layer, and to form a second portion of the dielectric layer in the TSV opening,
- filling the opening for the metal structure and the TSV opening with one conductive material, wherein the conductive material in the TSV opening extends over a top surface of the second portion of the dielectric layer closest to the first portion of the dielectric layer;
- and
- removing excess conductive material from surfaces of the dielectric layer, wherein removing excess conductive material comprises planarizing a top surface of the metal structure with a top surface of the wider end of the TSV.
3 more elements
Dependencies are inferred from the claim text.