Dual damascene dual alignment interconnect scheme
AssigneeInternational Business Machines Corporation
InventorsSteven J. Holmes, David V. Horak, Charles W. Koburger, III, Shom Ponoth, Chih-Chao Yang
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AssigneeInternational Business Machines Corporation
InventorsSteven J. Holmes, David V. Horak, Charles W. Koburger, III, Shom Ponoth, Chih-Chao Yang
Estimating the term…
A stack of a first metal line and a first dielectric cap material portion is formed within a line trench of first dielectric material layer. A second dielectric material layer is formed thereafter. A line trench extending between the top surface and the bottom surface of the second dielectric material layer is patterned. A photoresist layer is applied over the second dielectric material layer and patterned with a via pattern. An underlying portion of the first dielectric cap material is removed by an etch selective to the dielectric materials of the first and second dielectric material layer to form a via cavity that is laterally confined along the widthwise direction of the line trench and along the widthwise direction of the first metal line. A dual damascene line and via structure is formed, which includes a via structure that is laterally confined along two independent horizontal directions.
A metal interconnect structure comprising:
A metal interconnect structure comprising:
Dependencies are inferred from the claim text.