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US 8,803,319 B2Granted
Pillar structure having a non-planar surface for semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTin-Hao Kuo, Chen-Shien Chen, Ching-Wen Hsiao
Life of this patent
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Abstract
A conductive pillar for a semiconductor device is provided. The conductive pillar is formed such that a top surface is non-planar. In embodiments, the top surface may be concave, convex, or wave shaped. An optional capping layer may be formed over the conductive pillar to allow for a stronger inter-metallic compound (IMC) layer. The IMC layer is a layer formed between solder material and an underlying layer, such as the conductive pillar or the optional capping layer.
Claims20
A semiconductor structure comprising:
- a substrate comprising a first conductive layer;
- a pillar electrically coupled to the first conductive layer, the pillar having a non-planar upper surface;
- and
- solder material overlying the pillar and in electrical contact with the first conductive layer, wherein a distance between an uppermost point of the non-planar upper surface and a lowermost point of the non-planar upper surface is greater than about 6% of a width of the pillar.
1 more element
A structure comprising:
- a pillar of a first conductive material and electrically coupled to a first conductive layer, the pillar having a non-planar upper surface;
- and
- a second conductive material different from the first conductive material, the second conductive material overlying the pillar and in electrical contact with the first conductive layer;
- wherein a distance between an uppermost point of the non-planar upper surface and a lowermost point of the non-planar upper surface is greater than about 6% of a width of the pillar.
1 more element
A structure comprising:
- a pillar electrically formed of a first conductive material, the pillar having a non-planar upper surface;
- solder material overlying the pillar and in electrical contact with the pillar;
- and
- wherein a distance between an uppermost point of the non-planar upper surface and a lowermost point of the non-planar upper surface is greater than about 6 μm.
1 more element
Dependencies are inferred from the claim text.