Semiconductor device and manufacturing method of the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshiaki Oikawa, Shingo Eguchi
Life of this patent
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Abstract
With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.
Claims29
A semiconductor device comprising:
- a semiconductor circuit over a first insulator;
- an antenna electrically connected to the semiconductor circuit;
- a second insulator over the semiconductor circuit;
- a conductive film over the second insulator;
- and
- a third insulator over the conductive film,
- wherein the conductive film is electrically isolated from the semiconductor circuit, and
- wherein the first insulator has an elasticity of more than or equal to 5 GPa and less than or equal to 15 GPa.
A semiconductor device comprising:
- a semiconductor circuit over a first insulator;
- an antenna electrically connected to the semiconductor circuit;
- a second insulator over the semiconductor circuit;
- a conductive film over the second insulator;
- a third insulator over the conductive film, and
- a fourth insulator surrounding the first insulator, the semiconductor circuit, the antenna, the second insulator, the conductive film, and the third insulator,
- wherein the conductive film is electrically isolated from the semiconductor circuit, and
- wherein the first insulator has an elasticity of more than or equal to 5 GPa and less than or equal to 15 GPa.
A semiconductor device comprising:
- a semiconductor circuit over a first insulator;
- an antenna electrically connected to the semiconductor circuit;
- a second insulator over the semiconductor circuit;
- a conductive film over the second insulator
- a third insulator over the conductive film, and
- a fourth insulator surrounding the first insulator, the semiconductor circuit, the antenna, the second insulator, the conductive film, and the third insulator,
- wherein the conductive film is electrically isolated from the semiconductor circuit,
- wherein a part of the first insulator is melted and fused together with a part of the third insulator, and
- wherein the first insulator has an elasticity of more than or equal to 5 GPa and less than or equal to 15 GPa.
Dependencies are inferred from the claim text.