Semiconductor device including a stress relief layer and method of manufacturing
AssigneeInfineon Technologies AG
InventorsPeter Nelle, Uwe Schmalzbauer, Juergen Holzmueller, Markus Zundel
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Abstract
A semiconductor device includes a main body having a single crystalline semiconductor body. A layered structure directly adjoins a central portion of a main surface of the main body and includes a hard dielectric layer provided from a first dielectric material with Young's modulus greater than 10 GPa. A stress relief layer directly adjoins the layered structure opposite to the main body and extends beyond an outer edge of the layered structure. Providing the layered structure at a distance to the edge of the main body and covering the outer surface of the layered structures with the stress relief layer enhances device reliability.
Claims16
A semiconductor device comprising
- a main body comprising a single crystalline semiconductor body;
- a layered structure directly adjoining a central portion of a main surface of the main body and absent in an edge portion of the main surface between the central portion and an outer edge of the main body, the outer edge connecting the main surface and a backside surface opposite to the main surface, and the layered structure comprising a hard dielectric layer containing a first dielectric material having a Young's modulus greater than 10 GPa;
- and
- a dielectric stress relief layer directly adjoining the layered structure opposite to the main body, extending beyond an outer edge of the layered structure and covering at least an inner edge portion of the edge portion, the inner edge portion directly adjoining the central portion of the main surface.
An electronic assembly comprising a PCB and a semiconductor device soldered onto the PCB, the semiconductor device comprising:
- a main body comprising a single crystalline semiconductor body;
- a layered structure directly adjoining a central portion of a main surface of the main body and absent in an edge portion of the main surface between the central portion and an outer edge of the main body, the outer edge connecting the main surface and a backside surface opposite to the main surface, and the layered structure comprising a hard dielectric layer containing a first dielectric material having a Young's modulus greater than 10 GPa;
- and
- a dielectric stress relief layer directly adjoining the layered structure opposite to the main body, extending beyond an outer edge of the layered structure and covering at least an inner edge portion of the edge portion, the inner edge portion directly adjoining the central portion of the main surface.
Dependencies are inferred from the claim text.