Semiconductor device and method for manufacturing same
AssigneeSumitomo Electric Industries, Ltd.
InventorsTakeyoshi Masuda, Shin Harada, Keiji Wada, Toru Hiyoshi
Life of this patent
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Abstract
A substrate has a surface made of a semiconductor having a hexagonal single-crystal structure of polytype 4H. The surface of the substrate is constructed by alternately providing a first plane having a plane orientation of (0-33-8), and a second plane connected to the first plane and having a plane orientation different from the plane orientation of the first plane. A gate insulating film is provided on the surface of the substrate. A gate electrode is provided on the gate insulating film.
Claims17
A semiconductor device comprising:
- a substrate having a surface made of a semiconductor having a hexagonal single-crystal structure of polytype 4H, said surface of said substrate being constructed by alternately providing a first plane having a plane orientation of (0-33-8) and a second plane connected to said first plane and having a plane orientation different from said plane orientation of said first plane;
- a gate insulating film provided on said surface of said substrate;
- and
- a gate electrode provided on said gate insulating film.
A semiconductor device comprising:
- a substrate having a surface made of a semiconductor having a single-crystal structure other than a cubic structure, said single-crystal structure cyclically including an equivalent structure to the cubic structure, said surface of said substrate being constructed by alternately providing a first plane having a plane orientation of (001) in said equivalent structure, and a second plane connected to said first plane and having a plane orientation different from said plane orientation of said first plane;
- a gate insulating film provided on said surface of said substrate;
- and
- a gate electrode provided on said gate insulating film.
A method for manufacturing a semiconductor device, comprising the steps of:
- preparing a substrate having a surface made of silicon carbide having a hexagonal single-crystal structure of polytype 4H;
- chemically treating said surface of said substrate so as to alternately form, in said surface of said substrate, a first plane having a plane orientation of (0-33-8) and a second plane connected to said first plane and having a plane orientation different from said plane orientation of said first plane;
- forming a gate insulating film on said surface of said substrate;
- and
- forming a gate electrode on said gate insulating film.
A semiconductor device comprising:
- a semiconductor substrate having a trench;
- a gate insulating film provided on a side surface of said trench;
- and
- a gate electrode provided on said gate insulating film;
- said side surface of said trench extending along a plane having a plane orientation of (0-11-2) and including a first plane having a plane orientation of (0-33-8) and a second plane connected to said first plane and having a plane orientation different from said plane orientation of said first plane.
A semiconductor device comprising:
- a substrate having a trench;
- a gate insulating film provided on a side surface of said trench;
- and
- a gate electrode provided on said gate insulating film;
- a side surface of said trench including a first plane having a plane orientation of (0-33-8), a second plane connected to said first plane and having a plane orientation different from said plane orientation of said first plane, and a third plane connected to said second plane and having a plane orientation of (0-33-8).
Dependencies are inferred from the claim text.