Thick on-chip high-performance wiring structures
AssigneeInternational Business Machines Corporation
InventorsEdward C. Cooney, III, Jeffrey P. Gambino, Zhong-Xiang He, Tom C. Lee, Xiao H. Liu
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Abstract
Methods for fabricating a back-end-of-line (BEOL) wiring structure, BEOL wiring structures, and design structures for a BEOL wiring structure. The BEOL wiring may be fabricated by forming a first wire in a dielectric layer and annealing the first wire in an oxygen-free atmosphere. After the first wire is annealed, a second wire is formed in vertical alignment with the first wire. A final passivation layer, which is comprised of an organic material such as polyimide, is formed that covers an entirety of a sidewall of the second wire.
Claims11
A back-end-of-line (BEOL) wiring structure comprising:
- a first dielectric layer;
- a first wire in the first dielectric layer;
- a second wire in the first dielectric layer;
- a third wire stacked with the first wire;
- a fourth wire stacked with the second wire;
- and
- a final passivation layer comprised of an organic material, the final passivation layer covering an entirety of a sidewall of the third wire and of a sidewall of the fourth wire,
- wherein the first wire and the second wire each have a thickness ranging from 6 microns to 10 microns, the third wire and the fourth wire each have a thickness ranging from 4 microns to 6 microns, and the second wire is adjacent to the first wire and laterally separated from the first wire by a distance less than or equal to 15 microns.
Dependencies are inferred from the claim text.