Electronic device including a nonvolatile memory structure having an antifuse component

An electronic device including a nonvolatile memory cell, wherein the nonvolatile memory cell comprises:

• an access transistor having a gate electrode;
• a read transistor;
• an antifuse component coupled to the access transistor and the read transistor, wherein the antifuse component includes a first electrode, an antifuse dielectric layer overlying the first electrode, and a second electrode overlying the antifuse dielectric layer;
• and
• a conductive member that overlies the gate electrode of the access transistor and electrically floats.

An electronic device comprising a nonvolatile memory cell comprising:

• a first transistor including first and second source/drain regions and a first gate electrode;
• an antifuse component including a first electrode and a second electrode, wherein a first gate member includes the first gate electrode of the first transistor and the first electrode of the antifuse component, and a conductive member includes the second electrode of the antifuse component;
• and
• a second transistor including third and fourth source/drain regions and a second gate electrode, wherein the third source/drain region is electrically connected to the first gate member.