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US 8,803,278 B2Granted
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsYasuo Ata, Takahiro Okuno, Tetsujiro Tsunoda
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Abstract
A semiconductor device includes a semiconductor substrate, a surface electrode formed on the semiconductor substrate, an ineffective region formed to surround the surface electrode, and an ID-indicating portion made of a different material than the surface electrode and formed on the surface electrode to indicate an ID. The area of the ineffective region is smaller than the area of the surface electrode.
Claims7
A semiconductor device comprising:
- a semiconductor substrate;
- a surface electrode formed on said semiconductor substrate;
- an ineffective region formed to surround said surface electrode in plan view to protect at least said surface electrode;
- and
- an ID-indicating portion made of a different material than said surface electrode and formed on said surface electrode to indicate an ID,
- wherein a top surface of the ID-indicating portion and a portion of a top surface of the surface electrode are uncovered.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a surface electrode formed on said semiconductor substrate;
- an ineffective region formed to surround said surface electrode in plan view to protect at least said surface electrode;
- an ID-indicating portion made of a different material than said surface electrode and formed on said surface electrode to indicate an ID;
- a soldering portion of solderable material formed on said surface electrode;
- and
- a lead frame bonded to said soldering portion by solder,
- wherein said ID-indicating portion is formed of a same material as said soldering portion.
5 more elements
Dependencies are inferred from the claim text.