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US 8,803,273 B2Granted
High sensitivity image sensors
AssigneeSamsung Electronics Co., Ltd.
InventorsEric R. Fossum, Dae-Kil Cha, Young-Gu Jin, Yoon-Dong Park, Soo-Jung Hwang
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Abstract
A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions.
Claims11
A high sensitivity image sensor, comprising:
- a substrate;
- a first well in the substrate, the first well being configured to be a photoelectric transformation region to generate charges by incident light;
- source and drain regions in the first well;
- a gate region in the first well between the source and drain regions, the gate region being configured to accumulate the generated charges;
- and
- a channel region on the gate region in the substrate, the channel region being configured to connect the source and drain regions;
- and
- a selective transistor being configured to control an electrical connection between the source region and a source follower transistor.
5 more elements
Dependencies are inferred from the claim text.