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US 8,803,267 B2Granted
Magnetoresistive element and magnetoresistive memory
AssigneeKabushiki Kaisha Toshiba
InventorsEiji Kitagawa, Tadaomi Daibou, Yushi Kato
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Abstract
According to one embodiment, a magnetoresistive element includes a first magnetic film having a variable magnetization direction, a second magnetic film having an invariable magnetization direction, and a magnesium oxide film provided between the first magnetic film and the second magnetic film and being in contact with both the first magnetic film and the second magnetic film, and doped with at least one element selected from a first group consisting of copper, silver, and gold.
Claims10
A magnetoresistive element comprising:
- a first magnetic film having a variable magnetization direction;
- a second magnetic film having an invariable magnetization direction;
- and
- a magnesium oxide film provided between the first magnetic film and the second magnetic film and doped with at least one element selected from a first group consisting of gallium and indium.
1 more element
Dependencies are inferred from the claim text.