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US 8,803,266 B2Granted
Storage nodes, magnetic memory devices, and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKwang-seok Kim, U-In Chung, Jai-kwang Shin, Kee-won Kim, Sung-chul Lee, Ung-hwan Pi
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Abstract
A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.
Claims13
A storage node of a magnetic memory device, the storage node comprising:
- a lower magnetic layer;
- a tunnel barrier layer formed on the lower magnetic layer, the tunnel barrier layer having an inclined surface surrounding at least a portion of a side surface of the lower magnetic layer;
- and
- a free magnetic layer formed on the tunnel barrier layer, the free magnetic layer having a magnetization direction that is switchable in response to a spin current, the free magnetic layer also having a cap structure covering the inclined surface of the tunnel barrier layer.
1 more element
Dependencies are inferred from the claim text.