Magnetic memory layer and magnetic memory device including the same

A magnetic memory device, comprising:

• a conductive layer having a crystal structure;
• a crystalline stop layer on the conductive layer, the crystalline stop layer blocking continuity of the crystal structure;
• an amorphous layer on the crystalline stop layer;
• a NaCl structure layer on the amorphous layer;
• a first seed layer on the NaCl structure layer;
• a second seed layer above and directly on the first seed layer, the second seed layer grown according to a <002> crystal direction with respect to a surface of the first seed layer thereunder;
• and
• a main magnetic layer disposed on the second seed layer, the main magnetic layer grown according to the <002> crystal direction with respect to a surface of the second seed layer thereunder.

A magnetic memory device, comprising:

• a lower electrode;
• a magnetic memory layer on and electrically connected with the lower electrode, the magnetic memory layer including a lower magnetic layer, an upper magnetic layer, and a tunnel barrier layer;
• and
• an upper electrode on and electrically connected with the magnetic memory layer,
• wherein the lower magnetic layer includes:
• a base layer;
• a first lower seed layer on the base layer;
• a second lower seed layer above and directly on the first lower seed layer, the second lower seed layer having a body centered cubic (BCC) crystal structure grown according to a <002> crystal direction with respect to a surface of the first lower seed layer thereunder;
• and
• a lower main magnetic layer on the second lower seed layer, wherein the lower main magnetic layer is grown according to the <002> crystal direction with respect to a surface of the second lower seed layer thereunder and wherein the first lower seed layer has a property to change a surface energy between the base layer and second lower seed layer to increase growth of the second lower seed layer in the <002> crystal direction.