Room-temperature magnetoelectric multiferroic thin films and applications thereof
AssigneeUniversity of Puerto Rico
InventorsRam S Katiyar, Ashok Kumar, James F Scott
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Abstract
The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe0.67W0.33O3)x (PbZr0.53Ti0.47O3)1-x (0.2≦x≦0.8) (PFWx−PZT1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.
Claims31
A (PFWx−PZT1-x) magnetoelectric multiferroic composite comprising:
- (PbFe0.67W0.33O3)x (PbZr0.53Ti0.47O3)1-x where, 0.2≦x≦0.8.
A method of fabricating a memory device structure comprising:
- providing a p-type Si substrate;
- depositing at least one layer of a high-k dielectric material on said substrate, wherein the dielectric layer is about 2-8 nm thick;
- and
- depositing at least one layer of a (PFWx−PZT1-x) composite of composition, (PbFe0.67W0.33O3)x (PbZr0.53Ti0.47O3)1-x where, 0.2≦x≦0.8, on said dielectric layer, wherein the composite layer is about 350 nm thick.
Dependencies are inferred from the claim text.