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US 8,803,259 B2Granted
Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays
AssigneeSTC.UNM & University of New Mexico
InventorJingkuang Chen
Life of this patent
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Abstract
Systems, apparatus, and associated methods of forming the systems and/or apparatus may include imaging devices that may comprise multiple arrays of ultrasonic transducer elements for use in a variety of applications. These multiple arrays of ultrasonic transducer elements can be arranged to form a three-dimensional imaging device. Non-coplanar arrays of ultrasonic transducer elements can be coupled together. These imaging devices may be used as medical imaging devices. Additional apparatus, systems, and methods are disclosed.
Claims17
An imaging device comprising:
- a first array of ultrasonic transducer elements monolithically integrated on a first plate;
- a second array of ultrasonic transducer elements monolithically integrated on a second plate;
- and
- a flexible dielectric that couples the first plate to the second plate such that the first array and the second array are non-coplanar and arranged as part of a three-dimensional structure, the flexible dielectric being an extension of a region on a substrate of the first plate and being an extension of a region on a substrate of the second plate, the flexible dielectric including electrical interconnects between the ultrasonic transducer elements of the first and the second array to circuitry.
1 more element
An imaging device comprising:
- a first array of ultrasonic transducer elements;
- a second array of ultrasonic transducer elements;
- and
- a flexible dielectric that couples the first array to the second array such that the first array and the second array are non-coplanar and arranged as part of a three-dimensional structure, wherein each transducer element comprises a substrate having a doped surface creating a conducting surface layer, a layer of thermal oxide on the substrate, a layer of silicon nitride on the layer of thermal oxide, a layer of silicon dioxide on the layer of silicon nitride, and a layer of conducting thin film on the layer of silicon dioxide, the layers of silicon dioxide and thermal oxide sandwiching the layer of silicon nitride, the layer of conducting thin film separated from the layer of silicon nitride by the layer of silicon dioxide.
1 more element
Dependencies are inferred from the claim text.