Silicon carbide semiconductor device

A silicon carbide semiconductor device, comprising:

• a silicon carbide layer having a first main surface and a second main surface opposite to said first main surface, said silicon carbide layer including a drift layer forming said first main surface and having a first conductivity type, a body region provided on said drift layer and having a second conductivity type different from said first conductivity type, a source region provided on said body region to be spaced apart from said drift layer by said body region, forming said second main surface, and having said first conductivity type, and a relaxing region provided within said drift layer and having said second conductivity type, said relaxing region having an impurity dose amount Drx and a distance Ld from said first main surface, said drift layer having an impurity concentration Nd between said first main surface and said relaxing region, and relation of Drx>Ld·Nd being satisfied;
• a gate insulating film provided on said body region so as to connect said source region and said drift layer to each other;
• a gate electrode provided on said gate insulating film;
• a first electrode opposed to said first main surface;
• and
• a second electrode opposed to said second main surface.