Termination of high voltage (HV) devices with new configurations and methods

A semiconductor power device disposed in a semiconductor substrate having an active cell area and an edge termination area wherein:

• the edge termination area comprises a plurality of termination trenches surrounded by a heavily doped region of the first conductivity supported by a lightly doped layer of the first conductivity type, wherein the termination trenches are lined with a dielectric layer and filled with a conductive material therein;
• and
• doped regions of the second conductivity type completely surrounding alternating trenches of the termination trenches separated by one of the termination trenches disposed between the alternating trenches as a separating termination trench wherein each of the separating termination trenches is not completely surrounded by the doped region of the second conductivity type in the semiconductor substrate.