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US 8,803,244 B2Granted
Semiconductor device
AssigneeSony Corporation
InventorHideki Mori
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first conductivity type base formed on a surface of a substrate, a second conductivity type emitter formed on a surface of the base, a second conductivity type doped region which, along with accepting a first type of carrier from the emitter, injects the first type of carrier into the base, and is arranged to be spaced apart on the surface of the base from the emitter, and a second conductivity type collector which is formed on an opposite side to the emitter and the doped region, interposing the base.
Claims14
A semiconductor device comprising:
- a first conductivity type base formed on a surface of a substrate;
- a second conductivity type emitter formed on a surface of the base;
- a second conductivity type doped region which, along with accepting a first type of carrier from the emitter, injects the first type of carrier into the base, and is arranged spaced apart on the surface of the base from the emitter;
- and
- a second conductivity type collector arranged on the surface of base with the doped region between the emitter and the second conductivity type collector.
2 more elements
A semiconductor device comprising:
- a first conductivity type base formed on a surface of a substrate;
- a second conductivity type emitter formed on a surface of the base;
- a second conductivity type doped region which, along with accepting a first type of carrier from the emitter, injects the first type of carrier into the base, and is arranged spaced apart on the surface of the base from the emitter;
- a second conductivity type collector arranged on the surface of base with the doped region between the emitter and the second conductivity type collector
- another second conductivity type doped region, which along with receiving the first type of carrier from the doped region, injects the first type of carrier into the base, is arranged on the surface of the base spaced apart from the doped region and between the doped region and the second conductivity type collector and
- a gate electrode, on the surface of the base between the emitter and the doped region and an insulating film between the base and the gate electrode,
- wherein,
- a gap between the doped region and the other doped region is shorter than a diffusion length of the first type of carrier in the base.
5 more elements
Dependencies are inferred from the claim text.